Journal article
Donor Spins in Silicon for Quantum Technologies
Andrea Morello, Jarryd J Pla, Patrice Bertet, David N Jamieson
ADVANCED QUANTUM TECHNOLOGIES | WILEY | Published : 2020
Abstract
Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic‐scale objects represents a new and exciting technological revolution. In this article, the use of ion‐implanted donor spins in silicon for quantum technologies is described. It is reviewed how to fabricate and operate single‐atom spin qubits in silicon, obtaining some of the most coherent solid‐state qubits, and pathways to scale up these qubits to build large quantum processors are discussed. Heavier group‐V donors with large nuclear spins display electric quadrupole couplings that enable nucle..
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Grants
Awarded by Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology
Awarded by U.S. Army Research Office
Awarded by Australian Research Council
Awarded by Australian Department of Industry, Innovation and Science
Awarded by European Research Council under the European Community's Seventh Framework Programme (FP7/2007-2013)
Awarded by Agence Nationale de la Recherche under the Chaire Industrielle NASNIQ
Funding Acknowledgements
A.M. and D.N.J. acknowledge funding from the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (project no. CE170100012) and the U.S. Army Research Office (grant no. W911NF-17-1-0200). A.M. and J.J.P. acknowledge funding from an Australian Research Council Discovery Project (DP180100969).A.M. was supported by the Australian Department of Industry, Innovation and Science (grant no. AUSMURI00002). J.J.P. acknowledges an Australian Research Council Early Career Researcher Award (DE190101397). P.B. acknowledges support of the European Research Council under the European Community's Seventh Framework Programme (FP7/2007-2013) through grant agreementNo. 615767 (CIRQUSS), of the Agence Nationale de la Recherche under the Chaire Industrielle NASNIQ (grant no. ANR17-CHIN-0001), and of Region Ile-de-France Domaine d'Interet Majeur SIRTEQ under grant REIMIC. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the ARO or the US Government. The U.S. Government is authorized to reproduce and distribute reprints for government purposes notwithstanding any copyright notation herein. The authors acknowledge contributions to from W. D. Vine (image in Figure 5b), A. M. Jakob (data in Figures 10 and 11), S. E. Robson (Figure 10, inset).